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| MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC DESCRIPTION FA01215 is RF Hybrid IC designed for 900MHz band small size handheld radio. 0.6 2 3.5 14.7 14.2 2 3.5 2 Unit:mm FEATURES * Low voltage * High gain * High efficiency * High power 3.0V 24dB(typ.) 50% 34.5dBm 6 APPLICATION GSM IV 1 2 3 4 5 2.25 2.5 2.5 2.5 2.5 1.95 0.250.1 1 2 3 0.50.15 4 5 6 RF INPUT VG1,2 VD1 VD2 RF OUTPUT GND(FIN) ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature. Storage temperature. Condition PO34.5dBm ZG=ZL=50 Ta 25C 25C - - Ratings 4.5 15 -20 to +85 -30 to +90 Unit V dBm C C Note: Each maximum ratings is guaranteed independently and P.W.=580s,duty=1/8 operation. ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol f PO ht Igt rin 2fo,3fo OSC.T VSWR.T Parameter Frequency Output power Total efficiency Total gate current Return loss 2nd harmonics, 3rd harmonics Stability Load VSWR tolerance Test conditions Limits Min Typ Max - 890 915 - 34.5 - 50 - - -3 - 0 - - -6 - - -30 - - -60 No degradation or destroy Unit MHz dBm % mA dB dBc dBc - Note1 Note2 Note3 Note4 Note5 Note1: Pin=13dBm,VD1=VD2=3.0V(Pulse: P.W.=580s,duty=1/8),VG1,2=-2.0V,ZG=ZL=50 Note2: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(Pulse: P.W.=580s,duty=1/8),VG1,2=-2.0V,ZG=ZL=50 Note3: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ZG=ZL=50 Note4: PO=0~34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,L=3:1(all phase),ZG=50 Note5: PO=34.5dBm(Pin controlled),VD1=VD2=4.5V(Pulse:P.W.=580s,duty=1/8),VG1,2=-2.0V,L=6:1(all phase),ZG=50 Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC TYPICAL CHARACTERISTICS (Ta=25C) 40 OUTPUT POWER, TOTAL EFFICIENCY vs INPUT POWER PO 90 80 70 60 VD=3.0V 35 VG=-2.0V f=902.5MHz 30 25 20 15 10 5 0 -5 -30 -25 -20 -15 -10 -5 0 T 50 40 30 20 10 5 0 10 15 INPUT POWER Pin(dBm) EQUIVALENT CIRCUIT 1ST GATE 2ND GATE 1ST DRAIN 2ND DRAIN RF INPUT MATCHING CIRCUIT MATCHING CIRCUIT MATCHING CIRCUIT RF OUTPUT GND(FIN) Nov. 97 |
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